JPH0320906B2 - - Google Patents

Info

Publication number
JPH0320906B2
JPH0320906B2 JP56060889A JP6088981A JPH0320906B2 JP H0320906 B2 JPH0320906 B2 JP H0320906B2 JP 56060889 A JP56060889 A JP 56060889A JP 6088981 A JP6088981 A JP 6088981A JP H0320906 B2 JPH0320906 B2 JP H0320906B2
Authority
JP
Japan
Prior art keywords
film
semiconductor
semiconductor layer
electrode
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56060889A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57176757A (en
Inventor
Mitsuru Sakamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP56060889A priority Critical patent/JPS57176757A/ja
Publication of JPS57176757A publication Critical patent/JPS57176757A/ja
Publication of JPH0320906B2 publication Critical patent/JPH0320906B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
JP56060889A 1981-04-22 1981-04-22 Semiconductor device Granted JPS57176757A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56060889A JPS57176757A (en) 1981-04-22 1981-04-22 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56060889A JPS57176757A (en) 1981-04-22 1981-04-22 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS57176757A JPS57176757A (en) 1982-10-30
JPH0320906B2 true JPH0320906B2 (en]) 1991-03-20

Family

ID=13155368

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56060889A Granted JPS57176757A (en) 1981-04-22 1981-04-22 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS57176757A (en])

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5982761A (ja) * 1982-11-04 1984-05-12 Hitachi Ltd 半導体メモリ
JPS59138377A (ja) * 1983-01-28 1984-08-08 Agency Of Ind Science & Technol Ｍｉｓトランジスタ及びその製造方法
DE10248722A1 (de) 2002-10-18 2004-05-06 Infineon Technologies Ag Integrierte Schaltungsanordnung mit Kondensator und Herstellungsverfahren
DE10248723A1 (de) * 2002-10-18 2004-05-06 Infineon Technologies Ag Integrierte Schaltungsanordnung mit Kondensatoren und mit vorzugsweise planaren Transistoren und Herstellungsverfahren

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5820149B2 (ja) * 1976-10-20 1983-04-21 富士通株式会社 半導体記憶装置
JPS5519820A (en) * 1978-07-27 1980-02-12 Nec Corp Semiconductor device
JPS5562763A (en) * 1978-11-02 1980-05-12 Nec Corp Semiconductor device
JPS56107571A (en) * 1980-01-30 1981-08-26 Fujitsu Ltd Semiconductor memory storage device

Also Published As

Publication number Publication date
JPS57176757A (en) 1982-10-30

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